Growth kinetics and behavior of dust particles in silane plasmasWATANABE, Y; SHIRATANI, M.Japanese journal of applied physics. 1993, Vol 32, Num 6B, pp 3074-3080, issn 0021-4922, 1Conference Paper

Characterization of electron irradiated GaN n⁺-p diodeDONG UK LEE; EUN KYU KIM; BYUNG CHEOL LEE et al.Thin solid films. 2008, Vol 516, Num 11, pp 3482-3485, issn 0040-6090, 4 p.Conference Paper

Crystallization of amorphous Ge films induced by semiconductor diode laser annealingSAKAIKE, K; HIGASHI, S; MURAKAMI, H et al.Thin solid films. 2008, Vol 516, Num 11, pp 3595-3600, issn 0040-6090, 6 p.Conference Paper

Enhancement of the lifetime in organic light-emitting devices fabricated utilizing wide-bandgap-impurity-doped emitting layersCHOO, D. C; BANG, H. S; KWACK, B. C et al.Thin solid films. 2008, Vol 516, Num 11, pp 3610-3613, issn 0040-6090, 4 p.Conference Paper

Infinitely high etch selectivity during CH₄/H₂/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist maskKIM, D. Y; KO, J. H; PARK, M. S et al.Thin solid films. 2008, Vol 516, Num 11, pp 3512-3516, issn 0040-6090, 5 p.Conference Paper

Prediction of etching results and etching stabilization by applying principal component regression to emission spectra during in-situ cleaningIWAKOSHI, Takehisa; HIROTA, Kosa; MORI, Masahito et al.Thin solid films. 2008, Vol 516, Num 11, pp 3464-3468, issn 0040-6090, 5 p.Conference Paper

Single dopant white electrophosphorescent light emitting diodes using heteroleptic tris-cyclometalated Iridium(III) complexesJI HYUN SEA; IN JOON KIM; YOUNG KWAN KIM et al.Thin solid films. 2008, Vol 516, Num 11, pp 3614-3617, issn 0040-6090, 4 p.Conference Paper

Synthesis and photo physical study of iridium complex of new pentafluorophenyl-substituted ligandsGUI YOUN PARK; JI HYUN SEO; YOUNG KWAN KIM et al.Thin solid films. 2008, Vol 516, Num 11, pp 3622-3626, issn 0040-6090, 5 p.Conference Paper

Diagnostics of plasma for metal-organic chemical vapour deposition of Cu and fabrication of Cu thin films using the plasmaSHIRATANI, M; KAWASAKI, H; FUKUZAWA, T et al.Journal of physics. D, Applied physics (Print). 1996, Vol 29, Num 11, pp 2754-2758, issn 0022-3727Article

Potential structure in silane radio-frequency discharge containing particlesOKUNO, Y; FUJITA, H; SHIRATANI, M et al.Applied physics letters. 1993, Vol 63, Num 13, pp 1748-1750, issn 0003-6951Article

Control of electrical resistivity of TaN thin films by reactive sputtering for embedded passive resistorsKANG, S. M; YOON, S. G; SUH, S. J et al.Thin solid films. 2008, Vol 516, Num 11, pp 3568-3571, issn 0040-6090, 4 p.Conference Paper

Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta₂O₅ thin films deposited by dual ion beam sputteringYOON, S. G; KANG, S. M; JUNG, W. S et al.Thin solid films. 2008, Vol 516, Num 11, pp 3582-3585, issn 0040-6090, 4 p.Conference Paper

Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasmaSU RYUN MIN; HAN NA CHO; YUE LONG LI et al.Thin solid films. 2008, Vol 516, Num 11, pp 3521-3529, issn 0040-6090, 9 p.Conference Paper

Plasma ash processing solutions for advanced interconnect technologyFULLER, N. C. M; WORSLEY, M. A; TAI, L et al.Thin solid films. 2008, Vol 516, Num 11, pp 3558-3563, issn 0040-6090, 6 p.Conference Paper

Time-resolved optical emission spectroscopy of pulsed RF plasmas with copper magnetron sputteringKANG, Namjun; PARK, Junghoon; OH, Soo-Ghee et al.Thin solid films. 2008, Vol 516, Num 11, pp 3460-3463, issn 0040-6090, 4 p.Conference Paper

Formation processes of particulates in helium-diluted silane RF plasmas : Charged dust in plasmasSHIRATANI, M; FUKUZAWA, T; WATANABE, Y et al.IEEE transactions on plasma science. 1994, Vol 22, Num 2, pp 103-109, issn 0093-3813Article

On shifting of plowed plasma to back of current sheath in implosion phase of theta-pinchOGI, S; SHIRATANI, M; TAKAMATSU, M et al.Japanese journal of applied physics. 1987, Vol 26, Num 8, pp 1334-1341, issn 0021-4922, 1Article

Dependence of evolution of field reconnection at coil end region on mirror field in FRC formation stageOGI, S; SHIRATANI, M; TAKAMATSU, M et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp 762-763, issn 0021-4922, 1Article

Chemical and structural modifications in a 193-nm photoresist after low-k dry etchKESTERS, E; CLAES, M; BIEBUYK, J. J et al.Thin solid films. 2008, Vol 516, Num 11, pp 3454-3459, issn 0040-6090, 6 p.Conference Paper

Effects of various additive gases on chemical dry etching rate enhancement of low-k SiOCH layer in F₂/Ar remote plasmasYUN, Y. B; PARK, S. M; KIM, D. J et al.Thin solid films. 2008, Vol 516, Num 11, pp 3549-3553, issn 0040-6090, 5 p.Conference Paper

Electrochemical properties of TiN coatings on 316L stainless steel separator for polymer electrolyte membrane fuel cellJEON, W.-S; KIM, J.-G; KIM, Y.-J et al.Thin solid films. 2008, Vol 516, Num 11, pp 3669-3672, issn 0040-6090, 4 p.Conference Paper

Fabrication and electrochemical characterization of HRP-lipid Langmuir-Blodgett film and its application as an H₂O₂ biosensorKAFI, A. K. M; LEE, Dong-Yun; CHOI, Won-Suk et al.Thin solid films. 2008, Vol 516, Num 11, pp 3641-3645, issn 0040-6090, 5 p.Conference Paper

Increase of hardness and thermal stability of TiAlN coating by nanoscale multi-layered structurization with a BN phasePARK, Jong-Keuk; BAIK, Young-Joon.Thin solid films. 2008, Vol 516, Num 11, pp 3661-3664, issn 0040-6090, 4 p.Conference Paper

Investigation of particle reduction and its transport mechanism in UHF-ECR dielectric etching systemKOBAYASHI, Hiroyuki; YOKOGAWA, Kenetsu; MAEDA, Kenji et al.Thin solid films. 2008, Vol 516, Num 11, pp 3469-3473, issn 0040-6090, 5 p.Conference Paper

Synthesis and enzymatic hydrolysis of polydepsipeptides with functionalized pendant groupsOUCHI, T; NOZAKI, T; OKAMOTO, Y et al.Macromolecular chemistry and physics (Print). 1996, Vol 197, Num 6, pp 1823-1834, issn 1022-1352, 11 p.Article